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? advanced process technology ultra low on-resistance 150c operating temperature fast switching repetitive avalanche allowed up to tjmax some parameters are different from irf5210s/l p-channel lead-free s d g www.irf.com 1 d 2 pak irf5210spbf to-262 IRF5210LPBF s d g d s d g d gds gate drain source features of this design are a 150c junction operating temperature, fast switching speed and improved repetitive avalanche rating . these fea- tures combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. absolute maximum ratings parameter units i d @ t c = 25c continuous drain current, v gs @ -10v a i d @ t c = 100c continuous drain current, vgs @ -10v i dm pulsed drain current p d @t a = 25c maximum power dissipation w p d @t c = 25c maximum power dissipation linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy mj i ar avalanche current a e ar repetitive avalanche ener gy mj dv/dt peak diode recovery dv/dt v/ns t j operating junction and c t stg storage temperature range soldering temperature, for 10 seconds thermal resistance parameter typ. max. units r jc junction-to-case ??? 0.75 c/w r ja junction-to-ambient (pcb mount, steady state) ??? 40 -7.4 max. -38 -24 -140 3.1 170 1.3 20 17 120 -23 300 (1.6mm from case ) -55 to + 150 2 www.irf.com !"##$ ! % &'()*+,&-. &'( ? +/ &0'12 !3 #'$ i sd 0'12+ 0-(24+5 5 + % #()* 6 14 '7 8 #9: 6*; 30 <0# = $3 " : " >2?0 electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. t y p. max. units v (br)dss drain-to-source breakdown volta g e-100??????v ? v dss / ? t j breakdown volta g e temp. coefficient ??? -0.11 ??? v/c r ds(on) static drain-to-source on-resistance ??? ??? 60 m ? v gs(th) gate threshold volta g e-2.0???-4.0v g fs forward transconductance 9.5 ??? ??? s i dss drain-to-source leaka g e current ??? ??? -50 a ??? ??? -250 i gss gate-to-source forward leaka g e ??? ??? 100 na gate-to-source reverse leaka g e??????-100 q g total gate char g e ??? 150 230 nc q gs gate-to-source char g e ??? 22 33 q gd gate-to-drain ("miller") char g e???81120 t d(on) turn-on dela y time ??? 14 ??? ns t r rise time ??? 63 ??? t d(off) turn-off dela y time ??? 72 ??? t f fall time ??? 55 ??? l d internal drain inductance ??? 4.5 ??? nh between lead, 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from packa g e and center of die contact c iss input capacitance ??? 2780 ??? pf c oss output capacitance ??? 800 ??? c rss reverse transfer capacitance ??? 430 ??? source-drain ratings and characteristics parameter min. t y p. max. units i s continuous source current ??? ??? -38 (body diode) a i sm pulsed source current ??? ??? -140 ( bod y diode ) v sd diode forward voltage ??? ??? -1.6 v t rr reverse recovery time ??? 170 260 ns q rr reverse recover y char g e ??? 1180 1770 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) v ds = v gs , i d = -250a v ds = -100v, v gs = 0v v ds = -80v, v gs = 0v, t j = 125c conditions v gs = 0v, i d = -250a reference to 25c, i d = -1ma v gs = 10v, i d = -38a t j = 25c, i f = -23a, v dd = -25v di/dt = -100a/s t j = 25c, i s = -23a, v gs = 0v showing the integral reverse p-n junction diode. v gs = -10v mosfet symbol v gs = 0v v ds = -25v conditions ? = 1.0mhz, see fig. 5 r g = 2.4 ? i d = -23a v ds = -50v, i d = -23a v dd = -50v i d = -23a v gs = 20v v gs = -20v v ds = -80v v gs = -10v www.irf.com 3 ! ! " ! 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top -15v -10v -8.0v -7.0v -6.0v -5.5v -5.0v bottom -4.5v 60s pulse width tj = 25c -4.5v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -4.5v 60s pulse width tj = 150c vgs top -15v -10v -8.0v -7.0v -6.0v -5.5v -5.0v bottom -4.5v 2 4 6 8 10 12 14 -v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = -50v 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = -38a v gs = -10v 4 www.irf.com #$ %"&' ( !& (%)& %)& % *+)& 1 10 100 -v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 25 50 75 100 125 150 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 - v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = -80v v ds = -50v v ds = -20v i d = -23a 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 - i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 1 10 100 1000 -v ds , drain-to-source voltage (v) 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 150c single pulse 100sec 1msec 10msec www.irf.com 5 %+!& %+!& ," #$ -""! . /0 #$ 5 0#5 1 0.1 % 5 5 @a% + - v ds 90% 10% v gs t d(on) t r t d(off) t f 25 50 75 100 125 150 t c , case temperature (c) 0 5 10 15 20 25 30 35 40 - i d , d r a i n c u r r e n t ( a ) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) ? (sec) 0.128309 0.000069 0.377663 0.001772 0.244513 0.010024 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci= i / ri ci= i / ri 6 www.irf.com ( !& ( !&," #$ '!-& q g q gs q gd v g charge 1) d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 2 .," 2 . t p v ( br ) dss i as r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v 25 50 75 100 125 150 starting t j , junction temperature (c) 0 50 100 150 200 250 300 350 400 450 500 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top -8.7a -14a bottom -23a www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - 5 ? ? / @ 3 9@9 ? @a%0@a % 3 * , * ? ,! / ? < 6 ? ,,b/ * % " 3 6 "@a%" 60* 45 333 5 &(5" ,,15@ @ * !6-7*-% 5 8 www.irf.com ! www.irf.com 9 to-262 part marking information to-262 package outline dimensions are shown in millimeters (inches) |